Leakage detecting method for use in oxidizing system of forming oxide layer

ABSTRACT

Embodiments of the present invention are directed to providing a leakage detecting method for use in an oxidizing system of forming an oxide layer so as to shorten leakage detecting time period. In one embodiment, a leakage detecting method for use in an oxidizing system of forming an oxide layer comprises performing oxidizing processes on a plurality of test wafers in a plurality of test runs under a specified operating condition in an oxidizing system having an oxidizing chamber to form oxide layers on the test wafers having a plurality of oxide thicknesses for the plurality of test runs by flowing an oxidizing gas through the oxidizing chamber containing the test wafers. An oxygen concentration of the oxidizing gas exiting the oxidizing chamber is measured in each of the plurality of test runs. The method further comprises obtaining a correlation between the measured oxygen concentrations and the oxide thicknesses for the plurality of test runs to identify a threshold oxygen concentration corresponding to a maximum acceptable oxide thickness. An oxygen concentration greater than the threshold oxygen concentration indicates gas leakage in the oxidizing system.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application claims priority from R.O.C. Patent ApplicationNo.091135066, filed Dec. 3, 2002, the entire disclosure of which isincorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a leakage detecting method and, moreparticularly, to a leakage detecting method for use in an oxidizingsystem of forming oxide layers. The present invention also relates to amethod for estimating a thickness of an oxide layer formed on a wafer.

The growth of a silicon dioxide layer is very important for achievinghigh quality of the integrated circuits. Generally, two processes arewidely used form silicon dioxide layers. One process is employed to formnative oxide layers, and the other process is used to form thermal oxidelayers.

The process for forming a native oxide layer is performed by exposing asilicon wafer to an oxygen-containing atmosphere such as oxygen gas orsteam at about room temperature. The native oxide layer grows veryslowly and generally has a thickness of about 10 to 20 Å. The mechanismfor forming a native oxide layer can be illustrated as one of thefollowing reactions:Si(s)+O₂(g)→SiO₂(s)  (1)Si(s)+2H₂O(g)→SiO₂(s)+2H₂(g)  (2)

The formulae (1) and (2) are usually referred to as dry oxidation andwet oxidation, respectively. Under some circumstances, native oxidelayers are useful for enhancing interface properties between the surfaceof a semiconductor substrate and an insulator layer so as to providehigh-quality electrical insulators for electrical isolation of asemiconductor device. Under some circumstances, due to many polar groupscarried by the native oxide layers, some organic molecules having polargroups might be bonded to native oxide layers via hydrogen bonds orhydrophobic bonds. As the thicknesses of the native oxide layersincrease to some extent, their interface properties will decrease andtheir irregular morphology might lead to the increase of surfaceroughness. Therefore, the growth of the native oxide layer needs to bestopped when the thickness reaches about 20 Å.

The process for forming a thermal oxide layer is performed at atemperature ranging from about 700° C. to about 1200° C. by dryoxidation or wet oxidation as described above. Depending on applicationsof the semiconductor devices, the thermal oxide layer generally has athickness of about 300 to about 20,000 Å. The thermal oxide layers aresuitable for use in forming, for example, a field oxide layer, adielectric layer, a gate oxide layer, and the like.

FIG. 1 is a schematic view illustrating a typical oxidizing system forforming an oxide layer on a wafer by means of a wet oxidation process.Such an oxidizing system comprises a quartz furnace tube 11, a torch 12,a steam chamber 13 and a piping system. The piping system principallycomprises some feeding pipes for introducing reacting gases and purgegas, and an exhaust pipe (not shown) for discharging exhaust gases. Thereacting gases generally comprise hydrogen gas (H₂) and oxygen gas (O₂)for a wet oxidation process. Alternatively, for a dry oxidation process,only oxygen gas is required for forming oxide layers. The purge gas suchas nitrogen (N₂) is employed to purge the whole oxidizing system priorto feeding the reacting gases. The valves V1, V2 and V3 in the feedingpipes are used to control the open/close states or flow rates of thenitrogen gas, hydrogen gas and oxygen gas, respectively. The exhaustpipe is usually installed from a top vent of the quartz furnace tube 11for discharging the exhaust gas after the oxidation.

FIG. 2 (including FIGS. 2A and 2B) is a flowchart illustrating a processfor forming an oxide layer on a wafer according to prior art. Suchprocess comprises two main procedures, i.e., a preliminary procedure anda normal oxidizing procedure. The preliminary procedure is performed forascertaining whether there is a leakage of the overall oxidizing system.The preliminary procedure is described as follows and is shown withreference to FIGS. 1 and 2A. First, a plurality of test wafers areplaced into the quartz furnace tube 11 which serves as an oxidizingchamber (Step S11). Then, the valves V2 and V3 are closed, and the valveV1 is kept open (Step S12). In Step S13, nitrogen is introduced into theoxidizing system at a specified flow rate so as to purge the overalloxidizing system for about 5 minutes. Then, the quartz furnace tube 11is heated to an operating temperature for forming oxide layers on thetest wafers, e.g., 800 to 1000° C., and maintained at such temperaturefor about 10 to 20 minutes (Step S14). Then, the temperature of thequartz furnace tube 11 is decreased to about room temperature for about1 to 1.5 hours (Step S15). Then, as shown in Step S16, the test wafersare removed from the quartz furnace tube 11, and an average thickness dof the oxide layers on the test wafers is measured. If the averagethickness d is greater than an acceptable thickness, e.g., 20 Å, itindicates that some leakages might be generated in the piping system orassociated connectors. Meanwhile, the actual locations of leakages needto be detected. In addition, some remedial measures should be taken toprevent leakage, such as re-tightening the connectors and/or welding thepipes. To assure that there is no additional leakage in the oxidizingsystem, the steps S11 to S16 should be repeated.

Alternatively, if the average thickness d is less than the acceptablethickness, it means that no leakage occurs in the oxidizing system. Atthat time, the normal oxidizing procedure will be performed, asdescribed below with reference to FIG. 2B.

First, a batch of working wafers for forming thereon oxide layers areplaced into the quartz furnace tube 11 (Step S21). Then, the valves V2and V3 are closed, and the valve V1 is kept open (Step S22), andnitrogen is subsequently introduced into the oxidizing system at aspecified flow rate so as to purge the overall oxidizing system forabout 5 minutes (Step S23). Then, the quartz furnace tube 11 is heatedto an operating temperature for forming oxide layers on the workingwafers, e.g., 800 to 1000° C., and maintained at such temperature forabout 10 to 20 minutes (Step S24). Then, the valve V1 is closed, and thevalves V2 and V3 are opened in order to introduce oxygen and hydrogengases into the torch 12 (Step S25). The oxygen and hydrogen gasescombined in the torch 12 will ignite and burn to produce steam. Thesteam enters the steam chamber 13 and the quartz furnace tube 11.Depending on the application, the processing time is controlled to forma desirable thickness for each oxide layer on the working wafers (StepS26).

The above-mentioned preliminary procedure has some drawbacks. Forexample, the preliminary procedure is time-consuming for detectingleakage of the overall oxidizing system, because the average oxide layerthickness of the test wafers is obtained after the quartz furnace tube11 has been cooled down. In addition, if some leakages are likely to begenerated, it is necessary to re-tighten the connectors and/or weld thepipes and carry out the above preliminary procedure again until noleakage is detected. That is to say, when some leakages occur, thepreliminary procedure will be carried out at least two times. Sinceevery preliminary procedure takes about 1.5-2 hours, it takes arelatively long time period, e.g., approximately 0.5 to 1.0 day, andwastes a substantial number of test wafers for testing the leakingcondition. Therefore, there is a need to develop an improved process fordetecting a leaking condition of the oxidizing system so as to overcomethe above-mentioned problems.

BRIEF SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to providing a leakagedetecting method for use in an oxidizing system of forming an oxidelayer so as to shorten leakage detecting time period. A method is alsoprovided for estimating a thickness of an oxide layer formed on a wafer.

In accordance with an aspect of the present invention, a leakagedetecting method for use in an oxidizing system of forming an oxidelayer comprises performing oxidizing processes on a plurality of testwafers in a plurality of test runs under a specified operating conditionin an oxidizing system having an oxidizing chamber to form oxide layerson the test wafers having a plurality of oxide thicknesses for theplurality of test runs by flowing an oxidizing gas through the oxidizingchamber containing the test wafers. An oxygen concentration of theoxidizing gas exiting the oxidizing chamber is measured in each of theplurality of test runs. The method further comprises obtaining acorrelation between the measured oxygen concentrations and the oxidethicknesses for the plurality of test runs to identify a thresholdoxygen concentration corresponding to a maximum acceptable oxidethickness. An oxygen concentration greater than the threshold oxygenconcentration indicates gas leakage in the oxidizing system.

In some embodiments, the oxygen concentration of the oxidizing gasexiting the oxidizing chamber is measured by an oxygen analyzer disposeddownstream of the oxidizing chamber. The oxide thickness for each testrun is an average oxide thickness of the oxide thicknesses on aplurality of test wafers in the test run. The maximum acceptable oxidethickness is about 20 Å. The specified operating condition comprises atemperature from about 700° C. to 1200° C. and an oxidizing time periodfrom about 10 to 20 minutes.

In specific embodiments, the method further comprises performing anoxidizing process on at least one working wafer under the specifiedoperating condition in the oxidizing system to form an oxide layer onthe at least one working wafer by flowing an oxidizing gas through theoxidizing chamber containing the at least one working wafer, measuringan oxygen concentration of the oxidizing gas exiting the oxidizingchamber, and determining whether there is gas leakage in the oxidizingsystem by comparing the measured oxygen concentration with the thresholdoxygen concentration multiplied by a safety factor. There is no gasleakage in the oxidizing system when the measured oxygen concentrationis lower than the threshold oxygen concentration multiplied by thesafety factor. The safety factor may be about 0.9. An inert gas isintroduced into the oxidizing system to purge the oxidizing system priorto performing the oxidizing process on the at least one working wafer.The inert gas comprises nitrogen.

The method may include at least one of re-tightening one or moreconnectors and welding one or more pipes in the oxidizing system, upondetecting a gas leakage in the oxidizing system when the measured oxygenconcentration is greater than the threshold oxygen concentrationmultiplied by the safety factor. The method may further includeestimating a thickness of the oxide layer on the at least one workingwafer based on the measured oxygen concentration of the oxidizing gasexiting the oxidizing chamber and the correlation between the measuredoxygen concentration and the oxide thicknesses.

In accordance with another aspect of the invention, a method forestimating a thickness of an oxide layer formed on a wafer comprisesproviding an oxidizing system having an oxidizing chamber for forming anoxide layer on one or more substrates by flowing an oxidizing gasthrough the oxidizing chamber. A working wafer is placed in theoxidizing chamber of the oxidizing system. An oxidizing process isperformed on the working wafer under the specified operating conditionto form an oxide layer on the working wafer by flowing the oxidizing gasthrough the oxidizing chamber. The method further comprises measuring anoxygen concentration of the oxidizing gas exiting the oxidizing chamber,and estimating a thickness of said oxide layer according to the measuredoxygen concentration and a previously determined relation between oxidelayer thicknesses formed on test substrates placed in the oxidizingchamber and oxygen concentrations of gases exiting the oxidizing chamberin test runs of oxidizing processes performed on the test substratesunder a specified operating condition.

In some embodiments, the method further comprises, prior to placing theworking wafer in the oxidizing chamber, performing a checking procedureto ascertain that there is no leakage in the oxidizing system accordingto the previously determined relation between oxide layer thicknessesformed on test substrates placed in the oxidizing chamber and oxygenconcentrations of gases exiting the oxidizing chamber. Performing thechecking procedure comprises placing a working wafer in the oxidizingchamber of the oxidizing system, performing an oxidizing process on theworking wafer under the specified operating condition to form an oxidelayer on the working wafer by flowing the oxidizing gas through theoxidizing chamber, measuring an oxygen concentration of the oxidizinggas exiting the oxidizing chamber, and determining whether there is gasleakage in the oxidizing system by comparing the measured oxygenconcentration with the threshold oxygen concentration multiplied by asafety factor. There is no gas leakage in the oxidizing system when themeasured oxygen concentration is lower than the threshold oxygenconcentration multiplied by the safety factor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view illustrating a typical oxidizing system forforming an oxide layer on a wafer;

FIG. 2 is a flowchart illustrating a process for forming an oxide layeron a wafer according to prior art, wherein FIG. 2A is the flowchartshowing the preliminary procedure, and FIG. 2B is the flowchart showingthe normal oxidizing procedure;

FIG. 3 is a schematic view illustrating an oxidizing system for formingan oxide layer on a wafer according to an embodiment of the presentinvention;

FIG. 4 is schematic plot illustrating an oxide layer thickness vs.oxygen concentration detected by an oxygen analyzer in an embodiment ofthe invention; and

FIG. 5 is a flowchart illustrating a process for forming an oxide layeron a wafer according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 3 schematically illustrates an embodiment of an oxidizing systemused in the present invention to form an oxide layer on a wafer. Theelements corresponding to those of FIG. 1 are designated by identicalnumeral references, and detailed description thereof is omitted. Theoxidizing system shown in FIG. 3 comprises a quartz furnace tube 11, atorch 12, a steam chamber 13, an oxygen analyzer 14 and a piping system.The oxygen analyzer 14 may be installed in a bypass of an exhaust pipe110. The operating principle of the oxygen analyzer is well known in theart.

By utilizing the oxygen analyzer 14, the oxygen concentration of theexhaust gases from the quartz furnace tube 11 could be on-line detected.Furthermore, the purposes of minimizing the test wafers and reducingtime period for testing leaking conditions can be achieved accordingly.The utility of the oxygen analyzer is described in greater details asfollows.

In advance, a diagram illustrating a relation between oxide layerthickness and oxygen concentration is obtained by performing test runson a plurality of batches of test wafers. First, a first batch of testwafers is placed into the quartz furnace tube 11. The valves V2 and V3are closed, and the valve V1 is kept open. Nitrogen gas is introducedinto the oxidizing system at a specified flow rate, e.g., about 6,000 to10,000 sccm, so as to purge the overall oxidizing system for about 5minutes. Then, the quartz furnace tube 11 is heated to an operatingtemperature for forming oxide layers on the test wafers, e.g., about 800to 1000° C., and maintained at such temperature for about 10 to 20minutes so as to form an oxide layer on each of the test wafers.Meanwhile, a reference oxygen concentration C1 of the exhaust gas isdetected by the oxygen analyzer 14. Then, the temperature of the quartzfurnace tube 11 is decreased to about room temperature for about 1 to1.5 hours. The first batch of test wafers is removed from the quartzfurnace tube 11, and an average thickness d1 of the oxide layers on thetest wafers is measured. After changing flow rates of the nitrogengases, the above-mentioned procedures are repeated for the sameoxidizing system by successively placing second, third, fourth, . . . ,and nth batches of test wafers into the quartz furnace tube 11, anddetecting other reference oxygen concentrations C2, C3, C4, . . . , Cnand average oxide layer thicknesses d2, d3, d4, . . . , dn for eachbatch of test wafers, respectively. The relation of reference oxygenconcentration (C) and reference oxide layer thickness (d) is plotted ina diagram as shown in FIG. 4.

As shown in FIG. 4, the oxygen concentrations of exhaust gases arepositively related to the average oxide layer thickness of the testwafers. As previously described, the thickness of a wafer prior toperforming a normal oxidizing procedure should be controlled below anacceptable thickness, e.g., 20 Å. Referring to FIG. 4, the acceptablethickness is correlated to an acceptable oxygen concentration C* of theexhaust gas. In addition, when experimental errors are taken intoaccount, approximately 90% or less than 90% of the acceptable oxygenconcentration C* may be used as a threshold value. That is to say, whena measured oxygen concentration is less than the threshold value(0.9C*), it is assured that no leakage occur in the oxidizing system,and thus the normal oxidizing procedure can be performed.

After the threshold value is obtained, the process for forming an oxidelayers on a wafer to be oxidized can be simplified as follows.

In accordance with an embodiment of the present invention, the processfor forming an oxide layer on a wafer to be oxidized comprises achecking procedure and a normal oxidizing procedure. The checkingprocedure is done for a purpose of detecting leakage of the overalloxidizing system, and replaces the preliminary procedure in the priorart. The checking procedure of the present invention is more convenientthan the preliminary procedure in the prior art. In a case that theoxidizing system has not been operated for a relatively long timeperiod, the checking procedure will be performed in order to check theoverall oxidizing system. However, no test wafers are needed in suchchecking procedure. The steps for performing the checking procedure areillustrated in the flowchart of FIG. 5 and described as follows indetails. First, the valves V2 and V3 are closed, and the valve V1 iskept open (Step S41). Nitrogen gas is introduced into the oxidizingsystem at a specified flow rate to purge the overall oxidizing systemfor a period of time (e.g., about 5 minutes). The specified flow ratemay be substantially the same as that used for the test wafers (StepS42). Then, the quartz furnace tube 11 is heated to an operatingtemperature for forming oxide layers on the test wafers, e.g., about 800to 1000° C., and maintained at such temperature typically for about 10to 20 minutes so as to form an oxide layer on each of the test wafers.Meanwhile, an oxygen concentration C of the exhaust gas is detected bythe oxygen analyzer 14 (Step S43). If the detected oxygen concentrationC is greater than the threshold value, e.g., 0.9C*, some regularremedial measures are carried out to prevent leakage, such asre-tightening the connectors and/or welding the pipes. Then, the stepsS41 to S43 are repeated until the oxygen concentration detected by theoxygen analyzer is less than the threshold value. At that time, thegeneral normal oxidizing procedure, i.e., the steps S21 to S26, mayproceed so as to form oxide layers on the working wafers.

As will be apparent from the above descriptions according to the presentinvention, the checking procedure of the present invention can beapplied to estimate thicknesses of oxide layers by on-line detectingoxygen concentration. Furthermore, the checking procedure has someadvantages. One advantage is that no test wafers need to be placed intothe oxidizing system for performing the checking procedure. Instead, theoxygen concentration detected by the oxygen analyzer is an indication ofa possible leaking condition. Every detecting course typically takesapproximately 5 minutes. Since no test wafer is required to be removed,the quartz furnace tube 11 will no longer need to be cooled down formeasuring oxide layer thickness. Every cooling course takes about 1 to1.5 hours. Especially when some leakages are detected, the advantages ofthe present checking procedure become more apparent. Therefore, thechecking procedure of the present invention is more user-friendly,time-saving and cost-effective.

The present invention is illustrated by referring to a wet oxidationprocess. Nevertheless, the present invention can be applied to a dryoxidation process for forming oxide layers. Furthermore, the relationbetween oxide layer thickness and oxygen concentration will need to bere-determined once the quartz furnace tube refreshes a new one or theassociated oxidizing condition varies. In some cases, the relation plotcan be provided by suppliers of quartz furnace tubes.

While the invention has been described in terms of what is presentlyconsidered to be the most practical and preferred embodiments, it is tobe understood that the invention needs not be limited to the disclosedembodiment. On the contrary, it is intended to cover variousmodifications and similar arrangements included within the spirit andscope of the appended claims which are to be accorded with the broadestinterpretation so as to encompass all such modifications and similarstructures.

1. A leakage detecting method for use in an oxidizing system of formingan oxide layer, the method comprising the steps of: (a) providing anoxidizing system having an oxidizing chamber and an oxygen concentrationanalyzer installed in a bypass of an exhaust pipe of said oxidizingchamber; (b) performing an oxidizing process on a test wafer in a testrun under a specified operating condition in said oxidizing system byflowing an oxidizing gas through said oxidizing chamber containing saidtest wafer; (c) measuring an oxygen concentration of said oxidizing gasexiting said oxidizing chamber in said test run by said oxygenconcentration analyzer; (d) measuring the oxide thickness of said testwafer after said test run; (e) repeating (b), (c), and (d) for aplurality of test runs to obtain a correlation between the measuredoxygen concentration and the oxide thickness for the plurality of testruns to identify an acceptable oxygen concentration corresponding to amaximum acceptable oxide thickness, wherein an oxygen concentrationgreater than said acceptable oxygen concentration indicates gas leakagein said oxidizing system; (f) selecting a safety factor and multiplyingsaid acceptable oxygen concentration with said safety factor to get athreshold oxygen concentration; (g) performing a general oxidizingprocess on a working wafer under said specified operating condition insaid oxidizing system; wherein while said oxygen concentration analyzerstarts to measure an oxygen concentration of said oxidizing gas exitingsaid oxidizing chamber, if said measured oxygen concentration is greaterthan said threshold oxygen concentration, an indication of gas leakageexists in said oxidizing system.
 2. The method of claim 1 wherein saidmaximum acceptable oxide thickness is about 20 Å.
 3. The method of claim1 wherein said specified operating condition comprises a temperaturefrom about 700° C. to 1200° C. and an oxidizing time period from about10 to 20 minutes.
 4. The method of claim 1 wherein said safety factor isabout 0.9.
 5. The method of claim 1 further comprising introducing aninert gas into said oxidizing system to purge said oxidizing systemprior to performing said oxidizing process.
 6. The method of claim 5wherein said inert gas comprises nitrogen.
 7. The method of claim 1further comprising at least one action of re-tightening one or moreconnectors and welding one or more pipes in said oxidizing system, upondetecting a gas leakage in said oxidizing system when said measuredoxygen concentration is greater than said threshold oxygenconcentration.
 8. The method of claim 1 further comprising ascertainingthat there is no gas leakage in said oxidizing system when the measuredoxygen concentration is lower than said threshold oxygen concentration,and performing an oxidizing process on at least one working wafer undersaid specified operating condition in said oxidizing system to form theoxide layer on said working wafer.